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364 rows· Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. .
Forming the dielectric structure includes depositing hafnium oxide using atomic layer deposition ... a insulating layer ... Atomic layer deposition of zirconium ...
Thin film atomic layer deposition equipment for semiconductor processing. ... Atomic layer deposition ... for hafnium–aluminate and zirconium–aluminate ...
... layers provide an insulating layer in a variety of ... to deposit hafnium by atomic layer deposition. ... zirconium oxide atomic layer deposited ...
ALD metal oxide deposition process using direct oxidation: ... ALD metal oxide deposition process using direct ... Methods for atomic layer deposition of hafnium ...
FIG. 1 depicts all atomic layer deposition system for ... including an insulating layer having a hafnium ... Deposition of hafnium oxide and/or zirconium oxide and ...
In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate ...
Methods of using atomic layer deposition to deposit a high dielectric constant material on ... zirconium oxide atomic layer ... Atomic layer deposition of hafnium ...
The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...
... a zirconium and/or hafniumcontaining layer on a ... a substrate in a vapor deposition process. The zirconium, hafnium, ... "Atomic layer deposition" ...
A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple ... and/or aluminum by atomic layer deposition onto a ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...
A gate dielectric is formed by atomic layer deposition employing a hafnium ... Method for forming a gate insulating ... "Atomic Layer Deposition of Zirconium ...
Process for semiconductor device fabrication in which ... and depositing by Atomic Layer Deposition an insulating layer on ... Atomic layer deposited zirconium ...
In an embodiment, a zirconium silicon oxide film is formed by atomic layer deposition using a zirconium precursor containing silicon and a silicon precursor.
A plurality of cycles of a first atomic layer deposition ... In situ deposition of different metalcontaining films using ... the deposition of zirconium and hafnium ...
Systems and methods for insitu post atomic layer deposition ... Atomic layer deposited zirconium ... oxide and hafnium oxide using atomic layer deposition:
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
Genus, Inc. Radicalassisted ... Apparatuses and methods for atomic layer deposition of hafniumcontaining highk ... Insulating film formation method which exhibits ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to ... Atomic layer deposition of capacitor ... hafnium oxide and zirconium ...
... includes forming a layer of zirconium oxide by atomic layer deposition. ... for atomic layer deposition of hafniumcontaining high ... an insulating metal oxide ...
A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide ... layer of hafnium oxide by atomic layer deposition. ... Genus, Inc ...
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